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Standard Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTH 50P085
IXTT 50P085
V DSS
I D25
R DS(on)
= -85 V
= -50 A
= 55 m ?
Symbol
Test Conditions
Maximum Ratings
TO-247 (IXTH)
V DSS
V DGR
V GS
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
-85
-85
± 20
V
V
V
V GSM
I D25
I DM
I AR
E AR
P D
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T J
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
± 30
-50
-200
-50
30
300
V
A
A
A
mJ
W
TO-268 (IXTT)
D (TAB)
T J
T JM
-55 ... +150
150
° C
° C
G
S
D (TAB)
T stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
-55 ... +150
300
° C
° C
G = Gate,
S = Source,
D = Drain,
TAB = Drain
M d
Weight
Plastic Body for 10s
Mounting torque (TO-247)
TO-247
TO-268
250 ° C
1.13/10 Nm/lb.in.
6 g
5 g
Features
? International standard packages
? Low R DS (on) HDMOS TM process
? Rugged polysilicon gate cell structure
? Unclamped Inductive Switching (UIS)
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
?
rated
Low package inductance (<5 nH)
- easy to drive and to protect
V DSS
V GS(th)
I GSS
I DSS
R DS(on)
V GS = 0 V, I D = -250 μ A
V DS = V GS , I D = -250 μ A
V GS = ± 20 V DC , V DS = 0
V DS = 0.8 ? V DSS
V GS = 0 V
V GS = -10 V, I D = 0.5 ? I D25
T J = 25 ° C
T J = 125 ° C
-85
-3.0
-5.0
± 100
-25
-1
55
V
V
nA
μ A
mA
m ?
Applications
? High side switching
? Push-pull amplifiers
? DC choppers
? Automatic test equipment
Advantages
? Easy to mount with 1 screw
(isolated mounting screw hole)
? Space savings
? High power density
? 2005 IXYS All rights reserved
DS99140B(02/05)
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相关代理商/技术参数
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IXTT60N10 功能描述:MOSFET 60 Amps 100 V 0.033 W Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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IXTT64N25P 功能描述:MOSFET 64 Amps 250V 0.049 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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IXTT69N30P 功能描述:MOSFET 69 Amps 300V 0.049 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTT6N120 功能描述:MOSFET 6 Amps 1200V 2.700 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube